Wolfspeed Inc (Wolfspeed) designs, manufactures, and markets silicon carbide and GaN materials, power devices and RF devices. The company also offers silicon carbide material products such as epitaxial wafers, silicon carbide bare wafers and GaN epitaxial layers on silicon carbide wafers. Its products find application in radio-frequency (RF), power and other applications. Wolfspeed’s RF devices include high-electron mobility transistors (HEMTs), monolithic microwave integrated circuits (MMICs), laterally diffused MOSFET (LDMOS) power transistors, and GaN-based die. The company also offers power device products such as metal oxide semiconductor field effect transistors (MOSFETs), silicon carbide Schottky diodes, power modules and gate driver boards.

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The R&D arm of Wolfspeed intends to continuously improve its manufacturing processes and is involved in development of silicon carbide materials and fabrication technology for a 200mm platform, higher performance power and RF devices. The company also intends to increase quality, performance and diameter of its substrate and epitaxial materials. As of June 2023, the company owned 703 issued US patents and approximately 1,282 foreign patents with expiry dates extending up to 2048. It operates R&D facilities in North Carolina, California, Arizona, and Arkansas. In FY2023, the company incurred expenses of US$225.4 million on R&D, which as a percentage of revenue, stood at 24.4%.